Semiconductors
NVD260N65S3T4G onsemi Inventory and RFQ Quote
650V 12A 90W 260mΩ@6A,10V 4.5V@290uA 1PCSNChannel DPAK MOSFETs ROHS NVD260N65S3T4G onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NVD260N65S3T4G
- Brand
- onsemi
- Qty
- 538000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 12A 90W 260mΩ@6A,10V 4.5V@290uA 1PCSNChannel DPAK MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 12A
- Power Dissipation (Pd): 90W
- Drain Source On Resistance (RDS(on)@Vgs: 260mΩ@6A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@290uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.042nF@400V
- Total Gate Charge (Qg@Vgs): 23.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)