Semiconductors
NVATS4A101PZT4G onsemi Inventory and RFQ Quote
MOSFET Power MOSFET P-Chann -30 V NVATS4A101PZT4G onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NVATS4A101PZT4G
- Brand
- onsemi
- Qty
- 527000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET Power MOSFET P-Chann -30 V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 23 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2.6 V
- Qg - Gate Charge: 18.5 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 70 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET