Transistor
NTTFD022N10C onsemi Inventory and RFQ Quote
100V 25mΩ@7.8A,10V 4V@44uA 2 N-Channel WQFN-12(3.3x3.3) MOSFETs ROHS NTTFD022N10C onsemi Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NTTFD022N10C
- Brand
- onsemi
- Qty
- 536000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
100V 25mΩ@7.8A,10V 4V@44uA 2 N-Channel WQFN-12(3.3x3.3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 6A
- Power Dissipation (Pd): 1.7W
- Drain Source On Resistance (RDS(on)@Vgs: 25mΩ@7.8A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@44uA
- Type: 2 N
- Input Capacitance (Ciss@Vds): 585pF@50V
- Total Gate Charge (Qg@Vgs): 9nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)