Power
NTHL022N120M3S onsemi Inventory and RFQ Quote
SILICON CARBIDE (SIC) MOSFET ELI NTHL022N120M3S onsemi TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NTHL022N120M3S
- Brand
- onsemi
- Qty
- 517000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
SILICON CARBIDE (SIC) MOSFET ELI
- Source Category
- ["Discrete Semiconductor Products", "Transistors", "FETs, MOSFETs", "Single FETs, MOSFETs"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: onsemi
- Series: -
- Package: Tube
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V