Power
NTH4L060N090SC1 onsemi Inventory and RFQ Quote
SILICON CARBIDE MOSFET, NCHANNEL NTH4L060N090SC1 onsemi TO-247-4L Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NTH4L060N090SC1
- Brand
- onsemi
- Qty
- 591000
- Package
- TO-247-4L
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
SILICON CARBIDE MOSFET, NCHANNEL
- Source Category
- ["Discrete Semiconductor Products", "Transistors", "FETs, MOSFETs", "Single FETs, MOSFETs"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: onsemi
- Series: -
- Package: Tube
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 18V