Power
NTH4L014N120M3P onsemi Inventory and RFQ Quote
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS NTH4L014N120M3P onsemi TO-247-4L Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NTH4L014N120M3P
- Brand
- onsemi
- Qty
- 508000
- Package
- TO-247-4L
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- Source Category
- (SiC) > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain-Source On-State Resistance(15V): 16mΩ
- Operating Temperature: -55℃~+175℃
- Drain-Source On-State Resistance(18V): 14mΩ
- Configuration: -
- Drain-Source On-State Resistance(20V): -
- Channel Type: 1 N
- Drain Source Threshold Voltage: 3V
- Power Dissipation: 343W
- Continuous Drain Current: 127A
- Drain Source Voltage: 1200V