Transistor
NSVMMBT4401WT1G onsemi Inventory and RFQ Quote
40V 150mW 100@150mA,1V 600mA NPN SC-70-3 Bipolar (BJT) ROHS NSVMMBT4401WT1G onsemi Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NSVMMBT4401WT1G
- Brand
- onsemi
- Qty
- 520000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
40V 150mW 100@150mA,1V 600mA NPN SC-70-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic: 100@150mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 250MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 750mV@50mA
- Operating Temperature: -55℃~+150℃@(Tj)