Semiconductors
NJVMJD148T4G onsemi Inventory and RFQ Quote
45V 1.75W 85@500mA,1V 4A NPN DPAK Bipolar (BJT) ROHS NJVMJD148T4G onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NJVMJD148T4G
- Brand
- onsemi
- Qty
- 584000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
45V 1.75W 85@500mA,1V 4A NPN DPAK Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 20uA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 1.75W
- DC Current Gain (hFE@Ic: 85@500mA
- Collector Current (Ic): 4A
- Transition Frequency (fT): 3MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@2A
- Operating Temperature: -55℃~+150℃@(Tj)