Semiconductors
NCEP30T13GU Diodes Incorporated Inventory and RFQ Quote
30V 130A 1.7mΩ@10V,65A 80W 1.7V@250uA 1 N-Channel DFN-8(4.9x5.7) MOSFETs ROHS NCEP30T13GU Diodes Incorporated DFN5*6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCEP30T13GU
- Brand
- Diodes Incorporated
- Qty
- 550000
- Package
- DFN5*6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 130A 1.7mΩ@10V,65A 80W 1.7V@250uA 1 N-Channel DFN-8(4.9x5.7) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 130A
- Drain Source On Resistance (RDS(on)@Vgs: 1.7mΩ@10V
- Power Dissipation (Pd): 80W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 50pF@15V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.394nF@15V
- Total Gate Charge (Qg@Vgs): 39.6nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)