Semiconductors
NCEP12T12 Texas Instruments Inventory and RFQ Quote
120V 129A 4.8mΩ@10V,60A 185W 3.3V@250uA 1PCSNChannel TO-220 MOSFETs ROHS NCEP12T12 Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCEP12T12
- Brand
- Texas Instruments
- Qty
- 585000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
120V 129A 4.8mΩ@10V,60A 185W 3.3V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 120V
- Continuous Drain Current (Id): 129A
- Drain Source On Resistance (RDS(on)@Vgs: 4.8mΩ@10V
- Power Dissipation (Pd): 185W
- Gate Threshold Voltage (Vgs(th)@Id): 3.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 28pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 5.6nF@50V
- Total Gate Charge (Qg@Vgs): 84.7nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)