Semiconductors
NCEP045N10D Diodes Incorporated Inventory and RFQ Quote
100V 125A 4mΩ@10V,60A 200W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS NCEP045N10D Diodes Incorporated TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCEP045N10D
- Brand
- Diodes Incorporated
- Qty
- 540000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 125A 4mΩ@10V,60A 200W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 125A
- Drain Source On Resistance (RDS(on)@Vgs: 4mΩ@10V
- Power Dissipation (Pd): 200W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 25pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 5.5nF@50V
- Total Gate Charge (Qg@Vgs): 92nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)