Semiconductors
NCEP040N10D Diodes Incorporated Inventory and RFQ Quote
100V 130A 3.55mΩ@10V65A 210W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS NCEP040N10D Diodes Incorporated TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCEP040N10D
- Brand
- Diodes Incorporated
- Qty
- 553000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 130A 3.55mΩ@10V65A 210W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 130A
- Drain Source On Resistance (RDS(on)@Vgs: 3.55mΩ@10V65A
- Power Dissipation (Pd): 210W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 40pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 6.3nF@50V
- Total Gate Charge (Qg@Vgs): 110nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)