Semiconductors
NCE65T360D Texas Instruments Inventory and RFQ Quote
650V 11.5A 101W 290mΩ@10V,7A 3.5V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS NCE65T360D Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE65T360D
- Brand
- Texas Instruments
- Qty
- 519000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 11.5A 101W 290mΩ@10V,7A 3.5V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 11.5A
- Power Dissipation (Pd): 101W
- Drain Source On Resistance (RDS(on)@Vgs: 290mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 1.8pF@50V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 870pF@50V
- Total Gate Charge (Qg@Vgs): 19nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)