Semiconductors
NCE65T1K2K Texas Instruments Inventory and RFQ Quote
650V 4A 1.1Ω@10V,2A 41W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS NCE65T1K2K Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE65T1K2K
- Brand
- Texas Instruments
- Qty
- 545000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 4A 1.1Ω@10V,2A 41W 4V@250uA 1PCSNChannel TO-252-2(DPAK) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 4A
- Drain Source On Resistance (RDS(on)@Vgs: 1.1Ω@10V
- Power Dissipation (Pd): 41W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N