Semiconductors
NCE60H10K JSMSEMI Inventory and RFQ Quote
60V 100A 4.8mΩ@10V,20A 170W 2.85V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS NCE60H10K JSMSEMI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE60H10K
- Brand
- JSMSEMI
- Qty
- 593000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 100A 4.8mΩ@10V,20A 170W 2.85V@250uA 1PCSNChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs: 4.8mΩ@10V
- Power Dissipation (Pd): 170W
- Gate Threshold Voltage (Vgs(th)@Id): 2.85V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 290pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 4.9nF@25V
- Total Gate Charge (Qg@Vgs): 100nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)