Semiconductors
NCE55H12 Texas Instruments Inventory and RFQ Quote
55V 120A 5.5mΩ@10V,40A 200W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS NCE55H12 Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NCE55H12
- Brand
- Texas Instruments
- Qty
- 527000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
55V 120A 5.5mΩ@10V,40A 200W 4V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 120A
- Drain Source On Resistance (RDS(on)@Vgs: 5.5mΩ@10V
- Power Dissipation (Pd): 200W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N