Semiconductors
MMST5551Q-7-F Diodes Incorporated Inventory and RFQ Quote
Bipolar Transistors - BJT SS Hi Voltage Transistor MMST5551Q-7-F Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMST5551Q-7-F
- Brand
- Diodes Incorporated
- Qty
- 579000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT SS Hi Voltage Transistor
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN
- Emitter- Base Voltage VEBO: 6 V
- Package / Case: SOT-323-3
- Packaging: ['Cut Tape', 'MouseReel', 'Reel']
- Product Category: Bipolar Transistors - BJT
- Brand: Diodes Incorporated
- DC Current Gain hFE Max: 250
- Collector- Emitter Voltage VCEO Max: 160 V
- Configuration: Single
- Maximum Operating Temperature: + 150 C