Semiconductors
MMST5551-7-F Diodes Incorporated Inventory and RFQ Quote
Bipolar Transistors - BJT NPN BIPOLAR MMST5551-7-F Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMST5551-7-F
- Brand
- Diodes Incorporated
- Qty
- 578000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT NPN BIPOLAR
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN
- Emitter- Base Voltage VEBO: 6 V
- Width: 1.35 mm
- Package / Case: SOT-323-3
- Mounting Style: SMD/SMT
- Product Category: Bipolar Transistors - BJT
- Brand: Diodes Incorporated
- DC Current Gain hFE Max: 250
- Unit Weight: 0.000176 oz
- Collector- Emitter Voltage VCEO Max: 160 V