Transistor
MMBTA43 onsemi Inventory and RFQ Quote
200V 350mW 40@10mA,10V 500mA NPN SOT-23 Bipolar (BJT) ROHS MMBTA43 onsemi SOT-23 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMBTA43
- Brand
- onsemi
- Qty
- 506000
- Package
- SOT-23
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
200V 350mW 40@10mA,10V 500mA NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector-Emitter Breakdown Voltage (Vceo): 200V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic: 40@10mA
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 50MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@20mA
- Operating Temperature: -55℃~+150℃