Transistor
MMBTA42G-AE3-R UTC(Unisonic Tech) Inventory and RFQ Quote
300V 350mW 80@10mA,10V 500mA NPN SOT-23 Bipolar (BJT) ROHS MMBTA42G-AE3-R UTC(Unisonic Tech) Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMBTA42G-AE3-R
- Brand
- UTC(Unisonic Tech)
- Qty
- 528000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
300V 350mW 80@10mA,10V 500mA NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 300V
- Power Dissipation (Pd): 350mW
- DC Current Gain (hFE@Ic: 80@10mA
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 50MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 200mV@20mA
- Transistor Type: NPN
- Operating Temperature: -