Transistor
MMBT5551-L onsemi Inventory and RFQ Quote
160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS MMBT5551-L onsemi SOT-23 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMBT5551-L
- Brand
- onsemi
- Qty
- 587000
- Package
- SOT-23
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
160V 300mW 200@10mA,5V 600mA NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic: 200@10mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 100MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 200mV@50mA
- Operating Temperature: -55℃~+150℃@(Tj)