Transistor
MMBT5451DW YFW Inventory and RFQ Quote
200mW 100@10mA,5V 200mA NPN+PNP SOT-363 Bipolar (BJT) ROHS MMBT5451DW YFW Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMBT5451DW
- Brand
- YFW
- Qty
- 507000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
200mW 100@10mA,5V 200mA NPN+PNP SOT-363 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic: 100@10mA
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 100MHz
- Transistor Type: NPN+PNP
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 200mV@50mA
- Operating Temperature: -