Transistor
MMBT5401DW Shikues Inventory and RFQ Quote
160V 300mW 300@10mA,5V 600mA PNP SOT-363 Bipolar (BJT) ROHS MMBT5401DW Shikues Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MMBT5401DW
- Brand
- Shikues
- Qty
- 551000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
160V 300mW 300@10mA,5V 600mA PNP SOT-363 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic: 300@10mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 200MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 400mV@10mA
- Transistor Type: PNP
- Operating Temperature: -55℃~+150℃