Semiconductors
MJE3055 Infineon Technologies Inventory and RFQ Quote
60V 2W 20@4A,4V 10A NPN TO-220 Bipolar (BJT) ROHS MJE3055 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MJE3055
- Brand
- Infineon Technologies
- Qty
- 592000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 2W 20@4A,4V 10A NPN TO-220 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 1mA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Power Dissipation (Pd): 2W
- DC Current Gain (hFE@Ic: 20@4A
- Collector Current (Ic): 10A
- Transition Frequency (fT): 2MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 8V@10A
- Transistor Type: NPN
- Operating Temperature: -