Semiconductors
MIXG180W1200TEH IXYS Inventory and RFQ Quote
935W 280A 1.2kV - IGBT Transistors / Modules ROHS MIXG180W1200TEH IXYS E107X62-61L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MIXG180W1200TEH
- Brand
- IXYS
- Qty
- 536000
- Package
- E107X62-61L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
935W 280A 1.2kV - IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 935W
- Operating Temperature: -40℃~+175℃@(Tj)
- Collector Current (Ic): 280A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Input Capacitance (Cies@Vce): 8.5nF@100V
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V