Semiconductors
MIXA80W1200TED IXYS Inventory and RFQ Quote
390W 120A 1.2kV PT (Through Type) SMD IGBT Transistors / Modules ROHS MIXA80W1200TED IXYS E107X45-28L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MIXA80W1200TED
- Brand
- IXYS
- Qty
- 551000
- Package
- E107X45-28L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
390W 120A 1.2kV PT (Through Type) SMD IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 390W
- Operating Temperature: -40℃~+125℃@(Tj)
- Collector Current (Ic): 120A
- Collector-Emitter Breakdown Voltage (Vces): 1.2kV
- Type: PT( )
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V