Semiconductors
MIEB101H1200EH IXYS Inventory and RFQ Quote
IGBT Modules IGBT Module H Bridge MIEB101H1200EH IXYS E122X62-21L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MIEB101H1200EH
- Brand
- IXYS
- Qty
- 537000
- Package
- E122X62-21L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
IGBT Modules IGBT Module H Bridge
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > IGBT Modules
- Reference Source
- Mouser
Key Specifications
- Gate-Emitter Leakage Current: 200 nA
- Continuous Collector Current at 25 C: 183 A
- Product Category: IGBT Modules
- Subcategory: IGBTs
- Mounting Style: Chassis Mount
- Series: MIEB101H1200EH
- Brand: IXYS
- Package / Case: E3-Pack
- Collector-Emitter Saturation Voltage: 1.8 V
- Collector- Emitter Voltage VCEO Max: 1.2 kV