Semiconductors
MEE15N10 MATSUKI Inventory and RFQ Quote
100V 19.8A 80mΩ@10V,8A 62.5W 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS MEE15N10 MATSUKI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- MEE15N10
- Brand
- MATSUKI
- Qty
- 505000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 19.8A 80mΩ@10V,8A 62.5W 3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 19.8A
- Drain Source On Resistance (RDS(on)@Vgs: 80mΩ@10V
- Power Dissipation (Pd): 62.5W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 15pF@15V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 314pF@15V
- Total Gate Charge (Qg@Vgs): 15.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)