Semiconductors
ME13N10A MATSUKI Inventory and RFQ Quote
100V 11.3A 115mΩ@10V,5A 29.9W 3V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS ME13N10A MATSUKI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ME13N10A
- Brand
- MATSUKI
- Qty
- 538000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 11.3A 115mΩ@10V,5A 29.9W 3V@250uA 1PCSNChannel TO-252-3L MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 11.3A
- Drain Source On Resistance (RDS(on)@Vgs: 115mΩ@10V
- Power Dissipation (Pd): 29.9W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 32pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 524pF@25V
- Total Gate Charge (Qg@Vgs): 16.4nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)