Transistor
ME12N15 MATSUKI Inventory and RFQ Quote
150V 13.6A 150mΩ@10V,8A 44.6W 3V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS ME12N15 MATSUKI Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ME12N15
- Brand
- MATSUKI
- Qty
- 551000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
150V 13.6A 150mΩ@10V,8A 44.6W 3V@250uA 1PCSNChannel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 150V
- Continuous Drain Current (Id): 13.6A
- Drain Source On Resistance (RDS(on)@Vgs: 150mΩ@10V
- Power Dissipation (Pd): 44.6W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 29pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 839pF@25V
- Total Gate Charge (Qg@Vgs): 31.8nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)