Semiconductors
LMBTA06LT1G Texas Instruments Inventory and RFQ Quote
80V 225mW 100@100mA,1V 500mA NPN SOT-23 Bipolar (BJT) ROHS LMBTA06LT1G Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- LMBTA06LT1G
- Brand
- Texas Instruments
- Qty
- 538000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
80V 225mW 100@100mA,1V 500mA NPN SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Power Dissipation (Pd): 225mW
- DC Current Gain (hFE@Ic: 100@100mA
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 250mV@100mA
- Transistor Type: NPN
- Operating Temperature: -55℃~+150℃@(Tj)