Semiconductors
LMBT5401DW1T1G Texas Instruments Inventory and RFQ Quote
150V 300mW 60@10mA,5V 500mA PNP SC-88 Bipolar (BJT) ROHS LMBT5401DW1T1G Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- LMBT5401DW1T1G
- Brand
- Texas Instruments
- Qty
- 579000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
150V 300mW 60@10mA,5V 500mA PNP SC-88 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 150V
- Power Dissipation (Pd): 300mW
- DC Current Gain (hFE@Ic: 60@10mA
- Collector Current (Ic): 500mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 500mV@50mA
- Transistor Type: PNP
- Operating Temperature: -55℃~+150℃@(Tj)