Semiconductors
LMBT3946DW1T1G Texas Instruments Inventory and RFQ Quote
40V 150mW 100@10mA,1V 200mA NPN+PNP SC-88 Bipolar (BJT) ROHS LMBT3946DW1T1G Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- LMBT3946DW1T1G
- Brand
- Texas Instruments
- Qty
- 520000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 150mW 100@10mA,1V 200mA NPN+PNP SC-88 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic: 100@10mA
- Collector Current (Ic): 200mA
- Transition Frequency (fT): 300MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 300mV@50mA
- Transistor Type: NPN+PNP
- Operating Temperature: -55℃~+150℃@(Tj)