Semiconductors
LMBT2222AWT1G Texas Instruments Inventory and RFQ Quote
40V 150mW 40@500mA,10V 600mA NPN SOT-323-3 Bipolar (BJT) ROHS LMBT2222AWT1G Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- LMBT2222AWT1G
- Brand
- Texas Instruments
- Qty
- 517000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 150mW 40@500mA,10V 600mA NPN SOT-323-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic: 40@500mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 300MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 1V@500mA
- Transistor Type: NPN
- Operating Temperature: -55℃~+150℃@(Tj)