Semiconductors
LDN2367T1G Texas Instruments Inventory and RFQ Quote
20V 6.3A 1.5W 16mΩ@4.5V,4.5A 1.2V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS LDN2367T1G Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- LDN2367T1G
- Brand
- Texas Instruments
- Qty
- 589000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 6.3A 1.5W 16mΩ@4.5V,4.5A 1.2V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 6.3A
- Power Dissipation (Pd): 1.5W
- Drain Source On Resistance (RDS(on)@Vgs: 16mΩ@4.5V
- Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 100pF@10V
- Type: 2 N
- Input Capacitance (Ciss@Vds): 900pF@10V
- Total Gate Charge (Qg@Vgs): 12nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)