Transistor
LBC856BDW1T1G Rohm Semiconductor Inventory and RFQ Quote
65V 380mW 290@2mA,5V 100mA PNP SOT-363 Bipolar (BJT) ROHS LBC856BDW1T1G Rohm Semiconductor Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- LBC856BDW1T1G
- Brand
- Rohm Semiconductor
- Qty
- 544000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
65V 380mW 290@2mA,5V 100mA PNP SOT-363 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 65V
- Power Dissipation (Pd): 380mW
- DC Current Gain (hFE@Ic: 290@2mA
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 650mV@100mA
- Transistor Type: PNP
- Operating Temperature: -55℃~+150℃@(Tj)