Transistor
LBC847CWT1G STMicroelectronics Inventory and RFQ Quote
45V 150mW 520@2mA,5V 100mA NPN SC-70 Bipolar (BJT) ROHS LBC847CWT1G STMicroelectronics Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- LBC847CWT1G
- Brand
- STMicroelectronics
- Qty
- 509000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
45V 150mW 520@2mA,5V 100mA NPN SC-70 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic: 520@2mA
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 600mV@100mA
- Transistor Type: NPN
- Operating Temperature: -55℃~+150℃@(Tj)