Semiconductors
L2SA812RLT1G Analog Devices Inc. Inventory and RFQ Quote
50V 200mW 150mA PNP SOT-23 Bipolar (BJT) ROHS L2SA812RLT1G Analog Devices Inc. Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- L2SA812RLT1G
- Brand
- Analog Devices Inc.
- Qty
- 526000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
50V 200mW 150mA PNP SOT-23 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 200mW
- Collector Current (Ic): 150mA
- Transition Frequency (fT): 180MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 180mV@100mA
- Transistor Type: PNP
- Operating Temperature: -55℃~+150℃@(Tj)