Semiconductors
JMTQ35N06A Texas Instruments Inventory and RFQ Quote
60V 35A 41W 12mΩ@10V,30A 1.6V@250uA 1PCSNChannel PDFN-8L(3.3x3.3) MOSFETs ROHS JMTQ35N06A Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- JMTQ35N06A
- Brand
- Texas Instruments
- Qty
- 592000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 35A 41W 12mΩ@10V,30A 1.6V@250uA 1PCSNChannel PDFN-8L(3.3x3.3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 35A
- Power Dissipation (Pd): 41W
- Drain Source On Resistance (RDS(on)@Vgs: 12mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 124pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.9nF@25V
- Total Gate Charge (Qg@Vgs): 50nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)