Semiconductors
JMTE3002B Diodes Incorporated Inventory and RFQ Quote
30V 180A 1.95mΩ@10V,30A 130W 1.5V@250uA 1 N-Channel TO-263-3 MOSFETs ROHS JMTE3002B Diodes Incorporated TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- JMTE3002B
- Brand
- Diodes Incorporated
- Qty
- 529000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 180A 1.95mΩ@10V,30A 130W 1.5V@250uA 1 N-Channel TO-263-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 180A
- Drain Source On Resistance (RDS(on)@Vgs: 1.95mΩ@10V
- Power Dissipation (Pd): 130W
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 566pF@15V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 4.93nF@15V
- Total Gate Charge (Qg@Vgs): 70nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)