Semiconductors
IXYX200N65B3 IXYS Inventory and RFQ Quote
1.56kW 410A 650V TO-247-3 IGBT Transistors / Modules ROHS IXYX200N65B3 IXYS PLUS247,Max247 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXYX200N65B3
- Brand
- IXYS
- Qty
- 544000
- Package
- PLUS247,Max247
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
1.56kW 410A 650V TO-247-3 IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Turn?off Delay Time (Td(off)): 370ns
- Power Dissipation (Pd): 1.56kW
- Operating Temperature: -55℃~+175℃@(Tj)
- Turn?on Delay Time (Td(on)): 60ns
- Collector Current (Ic): 410A
- Collector-Emitter Breakdown Voltage (Vces): 650V
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.7V@15V
- Total Gate Charge (Qg@Ic: 340nC
- Diode Reverse Recovery Time (Trr): 108ns