Semiconductors
IXTT6N120 IXYS Inventory and RFQ Quote
MOSFET 6 Amps 1200V 2.700 Rds IXTT6N120 IXYS D3PAK,TO-268 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTT6N120
- Brand
- IXYS
- Qty
- 531000
- Package
- D3PAK,TO-268
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 6 Amps 1200V 2.700 Rds
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 1.2 kV
- Transistor Polarity: N-Channel
- Package / Case: TO-268-3
- Vgs th - Gate-Source Threshold Voltage: 5 V
- Width: 16.05 mm
- Qg - Gate Charge: 56 nC
- Vgs - Gate-Source Voltage: 20 V
- Type: High Voltage Power MOSFET
- Fall Time: 18 ns
- Mounting Style: SMD/SMT