Semiconductors
IXTT30N60P IXYS Inventory and RFQ Quote
MOSFET 30.0 Amps 600 V 0.24 Ohm Rds IXTT30N60P IXYS D3PAK，TO-268 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTT30N60P
- Brand
- IXYS
- Qty
- 588000
- Package
- D3PAK，TO-268
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-268-3
- Vgs th - Gate-Source Threshold Voltage: 5 V
- Width: 16.05 mm
- Qg - Gate Charge: 82 nC
- Vgs - Gate-Source Voltage: 30 V
- Type: PolarHV Power MOSFET
- Fall Time: 25 ns
- Mounting Style: SMD/SMT