Semiconductors
IXTR200N10P IXYS Inventory and RFQ Quote
MOSFET 133 Amps 100V 0.008 Rds IXTR200N10P IXYS Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTR200N10P
- Brand
- IXYS
- Qty
- 533000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 133 Amps 100V 0.008 Rds
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TO-247-3
- Vgs th - Gate-Source Threshold Voltage: 5 V
- Width: 5.21 mm
- Qg - Gate Charge: 235 nC
- Vgs - Gate-Source Voltage: 20 V
- Type: Polar HiPerFET Power MOSFET
- Fall Time: 90 ns
- Mounting Style: Through Hole