Semiconductors
IXTQ60N10T IXYS Inventory and RFQ Quote
100V 60A 18mΩ@25A,10V 176W 4.5V@50uA 1PCSNChannel TO-3P MOSFETs ROHS IXTQ60N10T IXYS TO-3PN Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTQ60N10T
- Brand
- IXYS
- Qty
- 600000
- Package
- TO-3PN
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 60A 18mΩ@25A,10V 176W 4.5V@50uA 1PCSNChannel TO-3P MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs: 18mΩ@25A
- Power Dissipation (Pd): 176W
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@50uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.65nF@25V
- Total Gate Charge (Qg@Vgs): 49nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)