Power
IXTP3N120 IXYS Inventory and RFQ Quote
MOSFET MOSFET Id3 BVdass1200 IXTP3N120 IXYS TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTP3N120
- Brand
- IXYS
- Qty
- 529000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET MOSFET Id3 BVdass1200
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 1.2 kV
- Transistor Polarity: N-Channel
- Package / Case: TO-220AB-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 4.83 mm
- Qg - Gate Charge: 42 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 18 ns
- Mounting Style: Through Hole
- Product Category: MOSFET