Semiconductors
IXTP10N60P IXYS Inventory and RFQ Quote
MOSFET 10.0 Amps 600 V 0.74 Ohm Rds IXTP10N60P IXYS Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTP10N60P
- Brand
- IXYS
- Qty
- 525000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 10.0 Amps 600 V 0.74 Ohm Rds
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 5 V
- Width: 4.83 mm
- Qg - Gate Charge: 32 nC
- Vgs - Gate-Source Voltage: 30 V
- Type: PolarHV Power MOSFET
- Fall Time: 18 ns
- Mounting Style: Through Hole