Semiconductors
IXTJ4N150 IXYS Inventory and RFQ Quote
MOSFET High Voltage Power MOSFET IXTJ4N150 IXYS TO-3PF Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTJ4N150
- Brand
- IXYS
- Qty
- 538000
- Package
- TO-3PF
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET High Voltage Power MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 1.5 kV
- Transistor Polarity: N-Channel
- Package / Case: TO-247-3
- Vgs th - Gate-Source Threshold Voltage: 5 V
- Width: 5.21 mm
- Qg - Gate Charge: 44.5 nC
- Vgs - Gate-Source Voltage: 30 V
- Type: High Voltage Power MOSFET
- Fall Time: 22 ns
- Mounting Style: Through Hole