Power
IXTH1N250 IXYS Inventory and RFQ Quote
MOSFET 1 Amps 2500V 40 Rds IXTH1N250 IXYS TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTH1N250
- Brand
- IXYS
- Qty
- 506000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET 1 Amps 2500V 40 Rds
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 2.5 kV
- Transistor Polarity: N-Channel
- Package / Case: TO-247-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 5.3 mm
- Qg - Gate Charge: 41 nC
- Vgs - Gate-Source Voltage: 10 V
- Type: Power MOSFET
- Fall Time: 39 ns
- Mounting Style: Through Hole