Power
IXTH12N150 IXYS Inventory and RFQ Quote
MOSFET >1200V High Voltage Power MOSFET IXTH12N150 IXYS TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IXTH12N150
- Brand
- IXYS
- Qty
- 532000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET >1200V High Voltage Power MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 1.5 kV
- Transistor Polarity: N-Channel
- Package / Case: TO-247-3
- Vgs th - Gate-Source Threshold Voltage: 4.5 V
- Width: 5.3 mm
- Qg - Gate Charge: 106 nC
- Vgs - Gate-Source Voltage: 30 V
- Type: High Voltage Power MOSFET
- Fall Time: 14 ns
- Mounting Style: Through Hole